HyperX SO-DIMM Memory Kit
For Notebook PCs and Netbooks, where the option of tweaking frequency and timing in the BIOS is ruled out, there is now a solution that will deliver the same boost in performance you have come to expect from Kingston. Simply install Kingston’s HyperX SO-DIMM Memory Kit in your Notebook PC and let the system take care of all parameters and configurations automatically to achieve optimal performance. The lightning fast response speed of the memory kit will make your programs run faster without consuming additional power.
HyperX SO-DIMM DDR3 features:
- No additional adjustments are required; your system will automatically adjust the relevant parameters to achieve optimal performance after installation.
- Operates on the same 1.5V voltage similar to standard DDR3 memory modules and does not shorten the system’s normal battery life.
- Featuring a slim aluminum heat sink to achieve ideal cooling efficiency despite the limited space in a Notebook PC.
- Ultra low latency timing that is 28.6% (CL5:CL7) compared to ordinary memory kits.
- The best memory option for users in pursuit of optimized performance on their Notebook PCs.
| DDR3 SO-DIMM Memory Kit |
|
| Kingston Part Number | Description | Capacity | Latency Timing | Voltage | |
|
| KHX8500S3ULK2/4GX | DDR3-1066, Non-ECC, Unbuffered SO-DIMM, Intel X.M.P | 4GB Kit
(2 - 2GB) | 5-5-5-15 | 1.5V | (Datasheet) | |
|
| KHX8500S3ULK2/4G | DDR3-1066, Non-ECC, Unbuffered SO-DIMM | 4GB Kit
(2 - 2GB) | 5-5-5-15 | 1.5V | (Datasheet) | |
|
HyperX SO-DIMM Dual Channel DDR3 features:
- No additional adjustments are required; your system will automatically adjust the relevant parameters to achieve optimal performance after installation.
- Operates on the same 1.8V voltage as standard DDR3 memory modules and does not shorten the system’s normal battery life.
- Ultra low latency timing; the latency for every read/write operation is shorter than that of ordinary memory kits.
| DDR2 Dual Channel SO-DIMM Memory Kit |
|
| Kingston Part Number | Description | Capacity | Latency Timing | Voltage | |
|
| KHX6400S2ULK2/4G | DDR2-800, Non-ECC, Unbuffered SO-DIMM | 4GB Kit
(2 - 2GB) | 4-4-4-12 | 1.8V | (Datasheet) | |
|
| KHX6400S2ULK2/2G | DDR2-800, Non-ECC, Unbuffered SO-DIMM | 2GB Kit
(2 - 1GB) | 4-4-4-12 | 1.8V | (Datasheet) | |
|
| KHX6400S2LLK2/4G | DDR2-800, Non-ECC, Unbuffered SO-DIMM | 4GB Kit
(2 - 2GB) | 5-5-5-15 | 1.8V | (Datasheet) | |
|
| KHX6400S2LLK2/2G | DDR2-800, Non-ECC, Unbuffered SO-DIMM | 2GB Kit
(2 - 1GB) | 5-5-5-15 | 1.8V | (Datasheet) | |
|
| KHX5300S2LLK2/4G | DDR2-667, Non-ECC, Unbuffered SO-DIMM | 4GB Kit
(2 - 2GB) | 4-4-4-12 | 1.8V | (Datasheet) | |
|
| KHX5300S2LLK2/2G | DDR2-667, Non-ECC, Unbuffered SO-DIMM | 2GB Kit
(2 - 1GB) | 4-4-4-12 | 1.8V | (Datasheet) | |
|
Definition of timing:
Latency timing is an important indicator of HyperX’s performance in actual applications. We have provided a brief description of different definitions in the following table so that you can have a better understanding of different timings and what they represent. Simply put, the lower these figures are, the faster the memory kit will be able to complete data read/write operations and perform the designated operation at the next address – for improved performance.
| Using KHX14400D3T1K2/2G as an example with latency timing of 8-8-8-24, each timing refers to: |
|
| Timing | Definition | Abbreviations | What it does |
|
| 8 |
CAS Latency |
CL |
The delay time which elapses between the confirmation data's array location and the moment the row addressing strobe (RAS) accesses a particular column in a selected row, and the number of clock cycles required for the data to move from the given array location to the bus. |
|
| 8 |
RAS to CAS
(Row to Column delay) |
rRCD |
The number of delay clock cycles for the signal to move from row to column. |
|
| 8 |
The number of delay clock cycles for the signal to move from row to column |
tRP/tRCP |
The number of clock cycles required to close a specific row and activate another row. |
|
| 24 |
Row Active Delay
(or RAS Active Delay, or time to ready) |
tRA/tRD/tRAS |
The number delay clock cycles for reactivation of a row upon completion of an operation. |
Why would the frequency become faster as timing increases?
Ideally, the timing should be kept as low as possible as long as the system is working under the same frequency. However, with new high-bandwidth memory products, you may notice that the timing parameters tend to be higher compared to low-bandwidth products. The difference in speed can be illustrated with the following example:
| Kingston Part Number | Memory Specification | Actual Clock | Unit time | CL | Actual CL | Actual latency (total) |
|
| KHX8500D2/1G |
DDR2-1066 |
533MHz |
1.876ns |
5 |
9.38ns |
56.28ns (5-5-5-15) |
|
| KHX6400D2LL/1G |
DDR2-800 |
400MHz |
2.5ns |
4 |
10ns |
60ns (4-4-4-12) |
|
| Standard DDR2-1066 |
DDR2-1066 |
533MHz |
1.876ns |
7 |
13.132ns |
78.792ns (7-7-7-21) |
|
| Standard DDR2-800 |
DDR2-800 |
400MHz |
2.5ns |
5 |
12.5ns |
75ns (5-5-5-15) |
|
| Standard DDR2-667 |
DDR2-667 |
333MHz |
12ns |
4 |
12ns |
72ns (4-4-4-12) |
|
If we were to compare DDR2-800 to DDR2-667, despite the difference of 1 in the timing value, the difference in actual CL between both is a mere 0.5ns, which means the difference in latency would be negligible. But when it comes to the speed of data transfer at the same frequency, DDR2-800 would naturally outperform DDR2-667. This is one of the primary strengths of HyperX. Regardless of high frequency or low latency timing, Kingston memory kits will shorten latency time for your system and deliver better performance and speed with the same operating voltage.
Note:
- Kingston has performed rigorous testing on all HyperX memory kits configured to parameters shown on the product label. However, the product may not operate on some motherboards or systems due to outdated firmware.
- Kingston does not recommend that users attempt to run their computers faster than the published frequencies or timings. Inappropriate parameter configurations may result in damage to your hardware.
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