USB Drives
Flash Cards

HyperX T1

Glossary of Terms


Total number of memory cells on a module expressed in Megabytes or Gigabytes. For kits, listed capacity is the combined capacity of all modules in the kit.

CAS Latency

One of the most important latency (wait) delays (expressed in clock cycles) when data is accessed on a memory module. Once the data read or write command and the row/column addresses are loaded, CAS Latency represents the final wait time until the data is ready to be read or written.


Third generation of Double Data Rate (DDR) SDRAM memory. Similar to DDR2, it is a continuing evolution of DDR memory technology that delivers higher speeds (up to 1600MHz), lower power consumption and heat dissipation. It is an ideal memory solution for bandwidth hungry systems equipped with dual and quad core processors and the lower power consumption is a perfect match for both server and mobile platforms.


Second-generation DDR memory technology. DDR2 memory modules are not backward-compatible with DDR due to lower voltage, different pin configurations and incompatible memory chip technology.


A single package containing multiple memory modules: K2 = 2 modules in a kit.


A memory module containing Register chip(s) used to relay and synchronise address and control signals issued by the motherboard's memory controller, and a Phase Locked Loop (PLL) chip used to relay the motherboard's clock signal to all the DRAM chips.


The data rate or effective clock speed that a memory module supports.